Micromechanics of domain switching in rhombohedral PZT ceramics

被引:20
|
作者
Hall, D. A. [1 ]
Steuwer, A.
Cherdhirunkorn, B.
Withers, P. J. [1 ]
Mori, T. [1 ]
机构
[1] Univ Manchester, Sch Mat, Ctr Mat Sci, Manchester M1 7HS, Lancs, England
关键词
X-ray methods; ferroelectric properties; PZT; residual stress;
D O I
10.1016/j.ceramint.2007.09.001
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The lattice strain epsilon{2 0 0} and diffraction peak intensity ratio R{1 1 1} have been determined in soft rhombobedral PZT ceramics during the application of an electric field up to 2.5 MV m(-1) and as a function of the grain orientation psi, using high energy synchtron X-ray diffraction. The magnitude of both epsilon {2 0 0} and R{1 1 1} increased sharply beyond a field level of 1 MV m(-1) due to the onset of ferroelectric domain switching. epsilon {2 0 0} exhibited a near linear dependence on cos(2) psi, in agreement with previous studies of the remanent-poled state. In contrast, the R{1 1 1}-cos(2) psi plot showed evidence of saturation in ferroelectric domain switching, particularly for psi > 60 degrees. The development of lattice strain during poling is discussed in terms of contributions from the intrinsic piezoelectric effect and from residual stress caused by differences in the poling strain of a grain, and the piezoelectric strain of a grain relative to its surroundings. (C) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:679 / 683
页数:5
相关论文
共 50 条
  • [21] Mechanically controlled domain structure in PZT piezoelectric ceramics
    Okayasu, Mitsuhiro
    Sato, Yuki
    Mizuno, Mamoru
    Shiraishi, Tetsuro
    CERAMICS INTERNATIONAL, 2012, 38 (06) : 4579 - 4585
  • [22] Low polarization switching in Lead Zirconate Titanate (PZT) Ceramics
    Farhat, N.
    Essolaani, W.
    MATERIAUX 2010, 2012, 28
  • [23] Effect of external fields on the switching current in PZT ferroelectric ceramics
    Nie, Heng Chang
    Chen, Xue Feng
    Feng, Ning Bo
    Wang, Gen Shui
    Dong, Xian Lin
    Gu, Yan
    He, Hong Liang
    Liu, Yu Sheng
    SOLID STATE COMMUNICATIONS, 2010, 150 (1-2) : 101 - 103
  • [24] Stress induced domain switching of PZT in compression tests
    Calderon-Moreno, JM
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 315 (1-2): : 227 - 230
  • [25] The Evaluation of Activation Parameters for Ferroelectric Switching in Soft PZT Ceramics
    Belov, A. Yu.
    Kreher, W. S.
    Nicolai, M.
    FERROELECTRICS, 2009, 391 : 42 - 50
  • [26] Dielectric Properties and Lattice Distortion in Rhombohedral Phase Region and Phase Coexistence Region of PZT Ceramics
    ZHANG Duan-Ming
    ZHONG Zhi-Cheng
    HAN Xiang-Yun
    YAN Wen-Sheng
    SUN Hong-Zhang
    YANG Feng-Xia
    ZHENG Ke-Yu
    WEI Nian
    LI Zhi-Hua Department of Physics
    CommunicationsinTheoreticalPhysics, 2005, 43 (05) : 855 - 860
  • [27] Dielectric properties and lattice distortion in rhombohedral phase region and phase coexistence region of PZT ceramics
    Zhang, DM
    Zhong, ZC
    Han, XY
    Yan, WS
    Sun, HZ
    Yang, FX
    Zheng, KY
    Wei, N
    Li, ZH
    COMMUNICATIONS IN THEORETICAL PHYSICS, 2005, 43 (05) : 855 - 860
  • [28] Domain switching in polycrystalline ferroelectric ceramics
    Li, JY
    Rogan, RC
    Üstündag, E
    Bhattacharya, K
    NATURE MATERIALS, 2005, 4 (10) : 776 - 781
  • [29] Domain switching in polycrystalline ferroelectric ceramics
    J. Y. Li
    R. C. Rogan
    E. Üstündag
    K. Bhattacharya
    Nature Materials, 2005, 4 : 776 - 781
  • [30] Progress in domain switching in ferroelectric ceramics
    Liu, Yan-Gai
    Jia, De-Chang
    Zhou, Yu
    Cailiao Kexue yu Gongyi/Material Science and Technology, 2006, 14 (01): : 9 - 11