X-ray beam induced current method at the laboratory x-ray source

被引：5
|
作者：
Fahrtdinov, R. R. [1 ]
Feklisova, O. V.
Grigoriev, M. V.
Irzhak, D. V.
Roshchupkin, D. V.
Yakimov, E. B.
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Inst Russian Acad Sci, Chernogolovka 142432, Russia
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2011年 / 82卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
Schottky diodes; X-ray apparatus; X-ray optics; GRAIN-BOUNDARIES; SILICON;
D O I：
10.1063/1.3633948
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The x-ray beam induced current method (XBIC) is realized on the laboratory x-ray source using the polycapillary x-ray optics. It is shown that rather good images of grain boundaries in Si can be obtained by this method. The parameters of x-ray beam are estimated by the simulation of Schottky diode image. A good correlation between the experimental and calculated grain boundary XBIC contrast is obtained. The possibilities of laboratory source based XBIC method are estimated. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633948]
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页数：3
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