Effect of surface treatment on wafer direct bonding process

被引：17

作者：

Lai, SI

Lin, HY

Hu, CT

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Mech Ind Res Labs, MENS Div, Hsinchu 310, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2004年 / 83卷 / 2-3期

关键词：

wafer direct bonding; surface treatment; interface layer; bonding properties;

D O I：

10.1016/j.matchemphys.2003.09.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Five various surface treatments before pre-bonding were conducted during the wafer direct bonding (WDB) process for comparison and evaluation of their effects on the properties of bonded wafers. The examinations on contact angles, infrared photography, interface layers of WDB wafers with various surface treatments were conducted, and results were correlated with the tensile properties. The greatest bonding strength of WDB wafers appeared in the samples with the HNO3 surface treatment. The high density of OH- bonds, the good hydrophilic character, and the small thickness of bonded interface layer are suggested to be the causes for this excellent bonding strength of the HNO3 treated WDB specimens. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：265 / 272

页数：8

共 24 条

[1] NONUNIFORMITIES OF NATIVE OXIDES ON SI(001) SURFACES FORMED DURING WET CHEMICAL CLEANING [J].