Low-Frequency Noise Analysis in HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness

被引：1

作者：

Choi, Do-Young ^{[1
]}

Baek, Rock-Hyun ^{[1
]}

Jeong, Yoon-Ha ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Elect & Elect Engn, Pohang 790784, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

low-frequency noise; HfO2; SiON; interfacial layer;

D O I：

10.1063/1.3666695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise of HfO2/SiON gate stack nMOSFETs with different interfacial layer (IL) thickness is investigated. All devices show a typical 1/f'-like noise with frequency exponent (gamma) equal to 1 and its dominant noise mechanism is found to be number fluctuations of channel carriers. The thicker-IL devices show lower noise characteristics and trap density than that of thinner-IL devices because SiON that has lower bulk trap density than that of HfO2 acts as a major noise source in the case of thicker-IL devices.

引用

页数：2

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