Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

被引：0

作者：

Yin, You ^{[1
]}

Hosaka, Sumio ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan

来源：

SILICON SCIENCE AND ADVANCED MICRO-DEVICE ENGINEERING II | 2012年 / 497卷

关键词：

phase-change memory; phase-change materials; performance; RANDOM-ACCESS MEMORY; LOW RESET CURRENT;

D O I：

10.4028/www.scientific.net/KEM.497.106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performance of lateral phase-change memories (LPCMs) is investigated by both electrical characterization and finite element analysis. Ge2Sb2Te5 lateral PCMs (GST-LPCMs) exhibit a low reset current but a bad endurance. By replacing GST with Sb2Te3 (ST) and adding a TiN layer between ST and electrodes, the ST-TiN-LPCMs are demonstrated to have a much improved endurance. Finite element analysis of the LPCMs with electric-thermal-structural interaction shows that thermal confinement makes GST-LPCMs low-power consumptive but that high level stress makes them readily broken. In contrast, ST-TiN-LPCMs experience low level stress during operation but high power consumption is required.

引用

页码：106 / 110

页数：5

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