Optical properties and chemical structure of ion implanted a-SiC:H

被引：8

作者：

Tsvetkova, T

Tzenov, N

Tzolov, M

Dimova-Malinovska, D

Adriaenssens, GJ

Pattyn, H

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

[2] Cent Lab Solar Energy & New Energy Sources, Sofia 1784, Bulgaria

[3] Katholieke Univ Leuven, Dept Phys, B-3001 Heverlee, Belgium

来源：

VACUUM | 2001年 / 63卷 / 04期

关键词：

ion implantation; amorphous semiconductors; silicon carbide; optical data storage;

D O I：

10.1016/S0042-207X(01)00269-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical contrast formation in amorphous silicon-carbon alloy films by ion implantation with Ar and group IV elements has been studied by different methods. The increased disorder and additional chemical modification of a-SiC : H, induced by the implantation of Ge or Sn, results in a considerable change of the optical properties as demonstrated by optical transmission spectra. The accompanying change in the optical gap and absorption coefficient has been derived from optical transmission and reflection measurements. The results have been related to the introduction of additional disorder and creation of new bonding configurations as suggested by Raman, infrared (IR), Mossbauer and X-ray photo-electron spectroscopy (XPS). (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：749 / 753

页数：5