Growth and properties of the single AgCd2GaSe4 crystals

被引：6

作者：

Bozhko, V. V. ^{[1
]}

Bulatetska, L. V. ^{[1
]}

Davydyuk, G. Ye. ^{[1
]}

Parasyuk, O. V. ^{[1
]}

Tretyak, A. P. ^{[1
]}

Vainorius, N. ^{[2
,3
]}

Kazukauskas, V. ^{[2
,3
]}

机构：

[1] Volyn Natl Univ, UA-43025 Lutsk, Ukraine

[2] Vilnius Univ, Semicond Phys Dept, LT-10222 Vilnius, Lithuania

[3] Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, Lithuania

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 330卷 / 01期

关键词：

Directional solidification; Crystal structure; Conductivity; Light absorption; Inorganic compounds; Semiconducting quarternary compounds; OPTICAL-PROPERTIES; PHASE-DIAGRAM; SYSTEM;

D O I：

10.1016/j.jcrysgro.2011.06.055

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of the quaternary phase AgCd2GaSe4 were grown using the method of directed crystallization. Their physical properties were studied. Studying the temperature dependence of electrical conductivity an impurity defect band with activation energy of similar to 0.30 eV in the upper half of the energy band gap was identified. Based on the analysis of the spectral dependence of the absorption coefficient, the width of the energy gap of the crystals was estimated similar to 1.7 eV at T=293 K. At the edge of the intrinsic absorption band this dependence could be approximated by the Urbach rule with the characteristic disorder parameter Delta(0)similar to 0.079 eV. Based on this value, concentration of the point defects responsible for the absorption edge blurring was determined to be similar to 1.4 x 10(20) cm(-3). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5 / 8

页数：4

共 13 条

[1] Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4 [J].