30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s

被引：124

作者：

Haglund, E. ^{[1
,2
]}

Westbergh, P. ^{[1
,2
]}

Gustavsson, J. S. ^{[1
,2
]}

Haglund, E. P. ^{[1
,2
]}

Larsson, A. ^{[1
,2
]}

Geen, M. ^{[3
]}

Joel, A. ^{[3
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanoscience, Photon Lab, SE-41296 Gothenburg, Sweden

[2] Chalmers, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

[3] IQE Europe Ltd, St Mellons CF3 0LW, Cardif, Wales

来源：

ELECTRONICS LETTERS | 2015年 / 51卷 / 14期

关键词：

surface emitting lasers; laser cavity resonators; optical interconnections; optical modulation; VCSEL; energy dissipation; vertical-cavity surface-emitting laser; optical interconnects; record-high modulation bandwidth; bias current; dissipated heat energy; bandwidth; 30; GHz; wavelength; 850; nm; bit rate 25 Gbit; s to 50 Gbit; s; size; 3; 5; mum; current; 1; 8; mA; OPERATING ERROR-FREE; OPTICAL LINK; GB/S;

D O I：

10.1049/el.2015.0785

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of <100 fJ/bit at 25, 40 and 50 Gbit/s.

引用

页码：1096 / 1097

页数：2

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