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Core/Shell Perovskite Nanocrystals: Synthesis of Highly Efficient and Environmentally Stable FAPbBr3/CsPbBr3 for LED Applications
被引:168
|作者:
Zhang, Chengxi
[1
]
Wang, Sheng
[1
]
Li, Xiaomin
[1
]
Yuan, Mingjian
[2
]
Turyanska, Lyudmila
[3
]
Yang, Xuyong
[1
]
机构:
[1] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China
[2] Nankai Univ, Coll Chem, 94 Weijin Rd, Tianjin 300071, Peoples R China
[3] Univ Nottingham, Fac Engn, Nottingham NG7 2RD, England
基金:
中国国家自然科学基金;
英国工程与自然科学研究理事会;
关键词:
core;
shell nanocrystals;
light-emitting diodes;
optical stability;
perovskite nanocrystals;
quantum efficiency;
LIGHT-EMITTING-DIODES;
PERFORMANCE;
BRIGHT;
ABSORPTION;
D O I:
10.1002/adfm.201910582
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Lead halide perovskite nanocrystals (PeNCs) are promising materials for applications in optoelectronics. However, their environmental instability remains to be addressed to enable their advancement into industry. Here the development of a novel synthesis method is reported for monodispersed PeNCs coated with all inorganic shell of cesium lead bromide (CsPbBr3) grown epitaxially on the surface of formamidinium lead bromide (FAPbBr(3)) NCs. The formed FAPbBr(3)/CsPbBr3 NCs have photoluminescence in the visible range 460-560 nm with narrow emission linewidth (20 nm) and high optical quantum yield, photoluminescence quantum yield (PLQY) up to 93%. The core/shell perovskites have enhanced optical stability under ambient conditions (70 d) and under ultraviolet radiation (50 h). The enhanced properties are attributed to overgrowth of FAPbBr(3) with all-inorganic CsPbBr3 shell, which acts as a protective layer and enables effective passivation of the surface defects. The use of these green-emitting core/shell FAPbBr(3)/CsPbBr3 NCs is demonstrated in light-emitting diodes (LEDs) and significant enhancement of their performance is achieved compared to core only FAPbBr(3)-LEDs. The maximum current efficiency observed in core/shell NC LED is 19.75 cd A(-1) and the external quantum efficiency of 8.1%, which are approximately four times and approximately eight times higher, respectively, compared to core-only devices.
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