The synthesis and characterisation of Cu2MX4 (M = W or Mo;: X = S, Se or S/Se) materials prepared by a solvothermal method

被引：68

作者：

Crossland, CJ ^{[1
]}

Hickey, PJ ^{[1
]}

Evans, JSO ^{[1
]}

机构：

[1] Univ Durham, Dept Chem, Durham DH1 3LE, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2005年 / 15卷 / 34期

关键词：

D O I：

10.1039/b507129a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper describes the synthesis of a family of layered materials with general formula Cu2MX4 (M = W or Mo; X = S, Se or S/Se) by a solvothermal route. The effect of synthesis temperature has been investigated and found to determine the structural form of the material produced. The structures of all materials have been solved and refined using powder X-ray diffraction. Variable temperature diffraction experiments have been performed on Cu2WS4 and Cu2WSe4. Conductivity measurements show Cu2WSe4 is semiconducting.

引用

页码：3452 / 3458

页数：7

共 19 条

[1] On the formation of framework indium sulfides [J].