The mechanism of dense interfacial voids and its impact on solder joint reliability

被引：3

作者：

Liu, Pilin ^{[1
]}

Lin, Cyber ^{[2
]}

Pathangey, Balu ^{[1
]}

Goyal, Deepak ^{[1
]}

机构：

[1] Intel Corp, 5000 W Chandler Blvd, Chandler, AZ 85226 USA

[2] Intel Corp, Shanghai, Peoples R China

来源：

2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2016年

关键词：

SAC; 305; solder; ENIG; NiPdAu; surface finish; interfacial voids; IMC; ELECTROLESS NI; TECHNOLOGY; LAYER;

D O I：

10.1109/ECTC.2016.104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SAC 305 solder joints with ENIG and NiPdAu surface finishes are studied. In general, nano voids in Ni2SnP can be only seen in SAC 305/ENIG but not in SAC 305/NiPdAu. However, when trace amount of impurities are present in NiPdAu, very dense nano voids are observed in Ni2SnP. The voids formation mechanism related to interaction of interfacial impurities and vacancy flux towards the interface has been discussed to explain the observations. BGA ball shear test indicates the dense interfacial voids can degrade the solder joint strength dramatically.

引用

页码：1128 / 1134

页数：7

共 17 条

[1] Origin and evolution of voids in electroless Ni during soldering reaction [J].

Chung, C. Key ;

Chen, Y. J. ;

Chen, W. M. ;

Kao, C. R. .

ACTA MATERIALIA, 2012, 60 (11) :4586-4593

[2] Kinetics of interfacial reaction between eutectic Sn-Pb solder and Cu/Ni/Pd metallizations [J].

Ghosh, G .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (11) :1238-1250

[3]

Goyal D., 2002, EL COMP TECHN C

[4] Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology [J].

Jang, JW ;

Kim, PG ;

Tu, KN ;

Frear, DR ;

Thompson, P .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8456-8463

[5] Characterization of ternary Ni2SnP layer in Sn-3.5Ag-0.7Cu/electroless Ni (P) solder joint [J].

Kang, Han-Byul ;

Bae, Jee-Hwan ;

Yoon, Jeong-Won ;

Jung, Seung-Boo ;

Park, Jongwoo ;

Yang, Cheol-Woong .

SCRIPTA MATERIALIA, 2010, 63 (11) :1108-1111

[6]

Kim J. Y., 2008, APPL PHYS LETT, V92

[7] Microvoid Formation at Solder-Copper Interfaces During Annealing: a Systematic Study of the Root Cause [J].

Kumar, Santosh ;

Smetana, Joseph ;

Love, David ;

Watkowski, James ;

Parker, Richard ;

Handwerker, Carol A. .

JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (12) :2415-2424

[8] Interfacial reactions between lead-free solders and common base materials [J].

Laurila, T ;

Vuorinen, V ;

Kivilahti, JK .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2005, 49 (1-2) :1-60

[9] Phase transformation of the phosphorus-rich layer in SnAgCu/Ni-P solder joints [J].

Lin, YC ;

Duh, JG .

SCRIPTA MATERIALIA, 2006, 54 (09) :1661-1665

[10] Segregant-induced cavitation of Sn/Cu reactive interface [J].

Liu, PL ;

Shang, JK .

SCRIPTA MATERIALIA, 2005, 53 (06) :631-634

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