Electrical transport properties of VO2 nanowire field effect transistors

被引：0
|
作者：
Maeng, Jongsun [1 ]
Jo, Gunho [1 ]
Kim, Tak-Wook [1 ]
Lee, Takhee [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年
关键词：
nanowire; vanadium dioxide; transistor; catalyst free CVD;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.
引用
收藏
页码：476 / 477
页数：2
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