Inductive plasma sources for plasma implantation and deposition

被引：21

作者：

Tuszewski, M ^{[1
]}

Henins, I ^{[1
]}

Nastasi, M ^{[1
]}

Scarborough, WK ^{[1
]}

Walter, KC ^{[1
]}

Lee, DH ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1998年 / 26卷 / 06期

关键词：

inductive plasma sources; plasma deposition; plasma ion implantation;

D O I：

10.1109/27.747883

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

External and reentrant radio frequency inductive plasma sources are developed for plasma ion implantation and deposition processes in a 1.8 m(3) vacuum vessel. Plasma densities in the range 10(16)-10(17) m(-3) are desirable for the above processes. External plasma sources could not yield the required plasma densities because of high particle losses in the transition region between the source and the main vessel. The particle losses are clarified through experiments and analysis, with and without multipole magnetic confinement. Reentrant plasma sources eliminate transmission losses and yield high plasma densities with good spatial uniformity.

引用

页码：1653 / 1660

页数：8

共 14 条

[1] PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].