Effects of oxygen flow rate on microstructure and properties of indium molybdenum oxide films by ion beam-assisted deposition

被引：8
作者：
Kuo, C. C. [1 ]
Liu, C. C. [1 ]
Lin, C. C.
Liou, Y. Y. [2 ]
Lan, Y. F. [3 ]
He, J. L. [3 ]
机构：
[1] Chien Kuo Technol Univ, Dept Mech Engn, Changhua 500, Taiwan
[2] Chien Kuo Technol Univ, Dept Elect Engn, Changhua 500, Taiwan
[3] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 407, Taiwan
来源：
VACUUM | 2008年 / 82卷 / 05期
关键词：
indium molybdenum oxide; polyethersulfone substrate; ion beam-assisted deposition; mobility; carrier concentration;
D O I：
10.1016/j.vacuum.2007.07.060
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The purpose of the present work is to experimentally study the effect of oxygen flow rate on the microstructure and properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate by ion beam-assisted deposition (IBAD). Crystalline quality, surface morphology, and optoelectronic properties of the IMO films are examined. Experimental results show that the IMO films present a columnar feature as observed by using FE-SEM with the corresponding root mean square (RMS) roughness of 2 nm as measured by using AFM. An increased oxygen flow rate reduces resistivity of the IMO film. The lowest resistivity of 1.59 x 10(-3) Omega cm, with carrier mobility of 16.31 cm(2)/V s, carrier concentration of 1.02 x 10(20) cm(-3), and visible transmittance of 82% of the IMO film was achieved under an oxygen flow rate of 5 scem at an ion beam discharge voltage of 150 V. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：441 / 447
页数：7
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