SEFI Modeling in Readout Integrated Circuit Induced by Heavy Ions at Cryogenic Temperatures

被引：5
作者：
Artola, L. [1 ]
Ducret, S. [2 ]
Advent, F. [2 ]
Hubert, G. [1 ]
Mekki, J. [3 ]
机构：
[1] Univ Toulouse, ONERA, DPHY, F-31055 Toulouse, France
[2] Sofradir, F-38113 Veurey Voroize, France
[3] French Space Agcy, CNES, F-31400 Toulouse, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 01期
关键词：
Heavy ions; infrared (IR) detectors; low temperatures; modeling; readout integrated circuit (ROIC); single-event functional interrupt (SEFI); SINGLE-EVENT TRANSIENT; MECHANISMS; IMPACT;
D O I：
10.1109/TNS.2018.2880791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a modeling approach of single-event functional interrupt (SEFI) which takes into account all the physical and electrical processes from the radiation particle down to the event at the system level. This paper is focused on the evaluation of SEFI sensitivity by experimental and simulation analyses of a readout integrated circuit (ROIC) designed by Sofradir for their infrared image sensors. Relevant correlations between simulation and experimental results of SEFI cross sections for heavy ions are presented and discussed. The simulation results confirm the strong SEFI robustness of the ROIC at 57 K.
引用
收藏
页码：452 / 457
页数：6
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