Thermal conductivity anisotropy and grain structure in Ge2Sb2Te5 films

被引：53

作者：

Lee, Jaeho ^{[1
]}

Li, Zijian ^{[1
]}

Reifenberg, John P. ^{[1
]}

Lee, Sangchul ^{[2
]}

Sinclair, Robert ^{[2
]}

Asheghi, Mehdi ^{[1
]}

Goodson, Kenneth E. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 08期

基金：

美国国家科学基金会;

关键词：

RANDOM-ACCESS MEMORY; PHASE-CHANGE; BOUNDARY RESISTANCE; CRYSTALLIZATION; GROWTH;

D O I：

10.1063/1.3573505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Although lateral thermal conduction in Ge2Sb2Te5 (GST) films can influence the performance of phase change memory (PCM), there are no data available for the in-plane thermal conductivity. This work measures both the in-plane and the out-of-plane thermal conductivities for the amorphous, face-centered-cubic, and hexagonal-close-packed phases of GST using two independent techniques. For crystalline GST, we report anisotropy favoring out-of-plane conduction by up to 54%, which varies with annealing time. Scaling arguments indicate that the anisotropy may be due to the thermal resistance of amorphous regions near grain boundaries. This explanation is consistent with transmission electron microscopy images showing columnar grains and amorphous phase at grain boundaries. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573505]

引用

页数：6

共 33 条

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