Charge transport in high-mobility conjugated polymers and molecular semiconductors

被引:681
作者
Fratini, Simone [1 ]
Nikolka, Mark [2 ]
Salleo, Alberto [3 ]
Schweicher, Guillaume [2 ]
Sirringhaus, Henning [2 ]
机构
[1] CNRS, Inst Neel, Grenoble, France
[2] Univ Cambridge, Cavendish Lab, Cambridge, England
[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
基金
英国工程与自然科学研究理事会; 美国国家科学基金会; 欧洲研究理事会;
关键词
FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; N-TYPE; ELECTRON-TRANSPORT; GRAIN-BOUNDARIES; HIGH-PERFORMANCE; DYNAMICS; ANISOTROPY; DISORDER; CHAINS;
D O I
10.1038/s41563-020-0647-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Organic semiconductors are making their way into applications ranging from display technology to flexible electronics and biomedical applications. This Review discusses current understanding of charge carrier transport in these materials and strategies to improve their performance. Conjugated polymers and molecular semiconductors are emerging as a viable semiconductor technology in industries such as displays, electronics, renewable energy, sensing and healthcare. A key enabling factor has been significant scientific progress in improving their charge transport properties and carrier mobilities, which has been made possible by a better understanding of the molecular structure-property relationships and the underpinning charge transport physics. Here we aim to present a coherent review of how we understand charge transport in these high-mobility van der Waals bonded semiconductors. Specific questions of interest include estimates for intrinsic limits to the carrier mobilities that might ultimately be achievable; a discussion of the coupling between charge and structural dynamics; the importance of molecular conformations and mesoscale structural features; how the transport physics of conjugated polymers and small molecule semiconductors are related; and how the incorporation of counterions in doped films-as used, for example, in bioelectronics and thermoelectric devices-affects the electronic structure and charge transport properties.
引用
收藏
页码:491 / 502
页数:12
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