High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

被引：238
作者：
Oishi, Toshiyuki [1 ]
Koga, Yuta [1 ]
Harada, Kazuya [1 ]
Kasu, Makoto [1 ]
机构：
[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 03期
关键词：
BETA-GA2O3; THIN-FILMS;
D O I：
10.7567/APEX.8.031101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-Hall-electron-mobility and high-performance Schottky barrier diodes for edge-defined fed-grown ((2) over bar 01) beta-Ga2O3 single crystals have been demonstrated. A high electron mobility of 886cm(2)/(V.s) at 85K was obtained. By theoretical specific scattering mechanisms, it was found that the electron mobility for >200K is limited by optical phonon scattering and that for < 100K by ionized impurity scattering. On Schottky barrier diodes with Ni contacts, the current density for the forward voltage was 70.3A/cm(2) at 2.0 V, and a nearly ideal ideality factor of 1.01 was obtained. (C) 2015 The Japan Society of Applied Physics
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页数：3
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