High-performance waveguided Ge-on-SOI metal-semiconductor-metal photodetectors with novel silicon-carbon (Si:C) Schottky barrier enhancement layer

被引：32

作者：

Ang, Kah-Wee ^{[1
]}

Zhu, Shiyang ^{[1
]}

Yu, Mingbin ^{[1
]}

Lo, Guo-Qiang ^{[1
]}

Kwong, Dim-Lee ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 9-12期

关键词：

Germanium-on-silicon-on-insulator (Ge-on-SOI); Photodetectors; Schottky barrier; Silicon-carbon (Si : C);

D O I：

10.1109/LPT.2008.921092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the demonstration of waveguided germanium-on-silicon-on-insulator metal-semiconductor-metal (MSM) photodetectors with novel silicon-carbon (Si:C) Schottky barrier enhancement layer. Significant suppression of dark current (I-dark) by similar to 4 orders of magnitude was achieved over a conventional MSM photodetector due to an enhanced hole Schottky barrier height of 0.52 eV. At an applied bias V-A of 1.0 V, a -3-dB bandwidth of similar to 12 GHz at an incident wavelength of 1550 nm was demonstrated. Optical measurements performed at photon wavelengths A of 1520-1570 nm reveal a uniform spectral response and quantum efficiency of similar to 760 mA/W and similar to 60%, respectively, demonstrating an effective photodetection for the entire C-band spectrum range.

引用

页码：754 / 756

页数：3

共 12 条

[1] Metal-germanium-metal ultrafast infrared detectors [J].