DFT study of cerium doped aluminum nitride

被引：10

作者：

Dar, Amna ^{[1
]}

Majid, Abdul ^{[1
]}

机构：

[1] Univ Gujrat, Dept Phys, Gujrat 50700, Pakistan

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2015年 / 71卷 / 01期

关键词：

CR; FERROMAGNETISM; GAN;

D O I：

10.1051/epjap/2015150199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ce:AlN was studied while searching for resourceful diluted magnetic semiconductors. First principle calculations were implemented to study the electronic, optical and magnetic properties of the material. Dopant Ce substituted cationic sites favors the ferromagnetic ground state and orbital interaction supports the formation of N2p-Ce4f bridge. The major component of magnetic moment is originated from dopant which shows parallel coupling with Al atoms but anti-parallel coupling with neighboring N. Moreover, Ce polarizes Al more than N atom. A competition between carrier mediated and indirect exchange interactions is suggested.

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页数：6

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