Row structure in metal-induced Si(111) surface reconstructions

被引：1
作者：
Jin, KJ
Sanders, BC
Pan, SH
Yang, GZ
机构：
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Lab Opt Phys, Beijing 100080, Peoples R China
[2] Macquarie Univ, Dept Phys, Sydney, NSW 2109, Australia
来源：
SURFACE AND INTERFACE ANALYSIS | 2001年 / 32卷 / 01期
关键词：
models of surface kinetics; quantum effects; surface relaxation and reconstruction; metalsemiconductor interfaces;
D O I：
10.1002/sia.1029
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that quantum size effects play a crucial role in the row structure of metal-induced Si(111) reconstruction by identifying the 'magic' widths of the metal adsorbates with the minima of electron energy as a function of adsorbate width. Without any adjustable parameters, we obtain accurate agreement with all recent results for Si(111)-4 x 1-In and Si(111)-3 x 1-M (M = Li, Na, K, Rb, Ag) structures. This new and simple physical picture of electron energies in metal adsorbates provides a universal quantitative model for describing the row structures of metal-induced Si(111) surface reconstructions. Copyright (C) 2001 John Wiley & Sons, Ltd.
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收藏
页码：166 / 170
页数：5
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