High growth speed of gallium nitride using ENABLE-MBE

被引：0

作者：

Williams, J. J. ^{[1
]}

Fischer, A. M. ^{[2
]}

Williamson, T. L. ^{[3
]}

Gangam, S. ^{[4
]}

Faleev, N. N. ^{[4
]}

Hoffbauer, M. A. ^{[3
]}

Honsberg, C. B. ^{[4
]}

机构：

[1] Arizona State Univ, Mat Sci Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA

[4] Arizona State Univ, Ira A Fulton Sch Engn, Sch Elect Comp & Energy Engn, Solar Power Lab, Tempe, AZ 85287 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

基金：

美国国家科学基金会;

关键词：

High resolution X-ray diffraction; Cathodoluminescence; Molecular beam cpitaxy; Gallium compounds; Nitrides;

D O I：

10.1016/j.jcrysgro.2015.04.007

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray omega scans of GaN (0002) have FVVHM in all samples less than 300 arc see. Cathodolurninescence shovvs radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates. (C) 2015 Published by Elsevier BM.

引用

页码：129 / 132

页数：4

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