Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

被引：6
|
作者：
Wang, K. [1 ,2 ]
Wang, P. [1 ]
Pan, W. W. [1 ]
Wu, X. Y. [1 ]
Yue, L. [1 ]
Gong, Q. [1 ]
Wang, S. M. [1 ,3 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[3] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 09期
关键词：
InGaPBi; dilute bismides; molecular beam epitaxy; broad PL spectrum; VAPOR-PHASE-EPITAXY; INASBI; GAAS1-XBIX; BI; INASSBBI; GAP;
D O I：
10.1088/0268-1242/30/9/094006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 +/- 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.
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页数：5
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