Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1-x Sb x nanowires

被引:58
作者
Anyebe, E. A. [1 ]
Rajpalke, M. K. [2 ,3 ]
Veal, T. D. [2 ,3 ]
Jin, C. J. [4 ]
Wang, Z. M. [5 ]
Zhuang, Q. D. [1 ,5 ]
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[2] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, Merseyside, England
[3] Univ Liverpool, Dept Phys, Liverpool L69 7ZF, Merseyside, England
[4] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
[5] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China
基金
中国国家自然科学基金; 英国工程与自然科学研究理事会;
关键词
MBE; antimony; surfactant; self-catalyzed; InAsSb nanowire; morphology; MOLECULAR-BEAM EPITAXY; QUANTUM DOTS; INFRARED DETECTORS; PHASE-SEPARATION; GROWTH; SEGREGATION; HETEROSTRUCTURES; ATOMS; SI; SILICON;
D O I
10.1007/s12274-014-0621-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition.
引用
收藏
页码:1309 / 1319
页数:11
相关论文
共 52 条
[1]   Theoretical and experimental study of the conduction mechanism in Sb2Se3 alloy [J].
Abd El-Wahaab, E ;
Fouad, SS ;
Fadel, M .
JOURNAL OF MATERIALS SCIENCE, 2003, 38 (03) :527-532
[2]   Surface energies of metals in both liquid and solid states [J].
Aqra, Fathi ;
Ayyad, Ahmed .
APPLIED SURFACE SCIENCE, 2011, 257 (15) :6372-6379
[3]   Synthesis and properties of antimonide nanowires [J].
Borg, B. Mattias ;
Wernersson, Lars-Erik .
NANOTECHNOLOGY, 2013, 24 (20)
[4]   Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy [J].
Borg, B. Mattias ;
Dick, Kimberly A. ;
Eymery, Joel ;
Wernersson, Lars-Erik .
APPLIED PHYSICS LETTERS, 2011, 98 (11)
[5]   Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy [J].
Cirlin, G. E. ;
Dubrovskii, V. G. ;
Samsonenko, Yu. B. ;
Bouravleuv, A. D. ;
Durose, K. ;
Proskuryakov, Y. Y. ;
Mendes, Budhikar ;
Bowen, L. ;
Kaliteevski, M. A. ;
Abram, R. A. ;
Zeze, Dagou .
PHYSICAL REVIEW B, 2010, 82 (03)
[6]   SURFACTANTS IN EPITAXIAL-GROWTH [J].
COPEL, M ;
REUTER, MC ;
KAXIRAS, E ;
TROMP, RM .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635
[7]   INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001) [J].
COPEL, M ;
REUTER, MC ;
VONHOEGEN, MH ;
TROMP, RM .
PHYSICAL REVIEW B, 1990, 42 (18) :11682-11689
[8]   Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].
Dick, KA ;
Deppert, K ;
Mårtensson, T ;
Mandl, B ;
Samuelson, L ;
Seifert, W .
NANO LETTERS, 2005, 5 (04) :761-764
[9]   The morphology of axial and branched nanowire heterostructures [J].
Dick, Kimberly A. ;
Kodambaka, Suneel ;
Reuter, Mark C. ;
Deppert, Knut ;
Samuelson, Lars ;
Seifert, Werner ;
Wallenberg, L. Reine ;
Ross, Frances M. .
NANO LETTERS, 2007, 7 (06) :1817-1822
[10]   Growth of Sb-based materials by MOVPE [J].
Dimroth, F ;
Agert, C ;
Bett, AW .
JOURNAL OF CRYSTAL GROWTH, 2003, 248 :265-273