Sn(IV) Inserted Lead-Free Perovskite Materials (MA3(Bi1-x Sn x )2I9) as Light Absorbers: Bandgap Engineering and Enhanced Photovoltaic Performance

被引:12
作者
Ahmad, Khursheed [1 ]
Kumar, Praveen [1 ]
Shrivastava, Priya [2 ]
Mobin, Shaikh M. [1 ,3 ,4 ]
机构
[1] Indian Inst Technol Indore, Dept Chem, Indore 453552, India
[2] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Mumbai 400076, India
[3] Indian Inst Technol Indore, Dept Biosci & Biomed Engn, Indore 453552, India
[4] Indian Inst Technol Indore, Dept Met Engn & Mat Sci, Indore 453552, India
关键词
bandgap engineering; MBI; Pb-free perovskite solar cells; Pb-free perovskites; Sn doping; SOLAR-CELLS; HALIDE PEROVSKITES; FILMS; DEPOSITION;
D O I
10.1002/ente.202100717
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Recently, methyl ammonium bismuth iodide (MA(3)Bi(2)I(9)) and methyl ammonium antimony iodide (MA(3)Sb(2)I(9)) perovskite structures have received enormous attention because of their good aerobic stability. In particular, MA(3)Bi(2)I(9) perovskite-like material is widely explored as a visible light absorber in the construction of lead-free perovskite solar cells (LFPSCs) because of its nontoxic nature and optoelectronic properties. However, the wide bandgap (2.2 eV) of the MA(3)Bi(2)I(9) perovskite-like material is the major drawback, which may be responsible for poor light absorption and lower performance of the developed LFPSC devices. Thus, it is believed that the optical features of the MA(3)Bi(2)I(9) perovskite may be tuned using bandgap engineering approach.
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页数:6
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