Microwave-crystallization of amorphous silicon film using carbon-overcoat as susceptor

被引：11

作者：

Fong, S. C. ^{[1
]}

Chao, H. W. ^{[2
]}

Chang, T. H. ^{[2
]}

Leu, H. J. ^{[3
]}

Tsai, I. S. ^{[3
]}

Cheng, S. Y. ^{[5
]}

Wang, C. Y. ^{[5
]}

Chin, T. S. ^{[1
,4
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[3] Feng Chia Univ, Nanotechnol Res Ctr, Taichung 40724, Taiwan

[4] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan

[5] Ind Technol Res Inst, Mat & Chem Engn Lab, Chutung 31000, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 13期

关键词：

Microwave heating; Amorphous silicon; Poly-crystalline Si; Dielectric properties; Carbon-overcoat; INDUCED LATERAL CRYSTALLIZATION; SOLID-PHASE CRYSTALLIZATION; POLYCRYSTALLINE SI FILMS; THIN-FILMS; TEMPERATURE;

D O I：

10.1016/j.tsf.2011.02.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystallization of amorphous silicon (a-Si:H) film is extremely important in many aspects of electronic devices and has been heavily explored. We demonstrate that microwave irradiation, 200 W, is able to fast-crystallize a-Si:H film using as susceptor carbon-overcoat which contains graphite and carbon nano-tube. X-ray diffraction and Raman spectra reveal that nearly full crystallization is reached within 90 s. Microwave absorption by the carbon-overcoat generates thermal energy which heats up a-Si:H film to a threshold temperature 440 +/- 10 degrees C required for initiation of microwave crystallization. Dielectric properties of a-Si:H film facilitate its self-heating and nucleation of Si crystallites at above the threshold temperature. This method is extendable to fast-crystallize a-Si:H film on a remote and large-area basis. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4196 / 4200

页数：5

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