On the detectivity of quantum-dot infrared photodetectors

被引：63
作者：
Ryzhii, V [1 ]
Khmyrova, I
Mitin, V
Stroscio, M
Willander, M
机构：
[1] Univ aizu, Comp Solid State Phys Lab, Aizu Wakamatsu 9658580, Japan
[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
[4] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[5] Univ Gothenburg, S-41296 Gothenburg, Sweden
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期
关键词：
D O I：
10.1063/1.1376435
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the analysis of thermally-limited operation of quantum-dot infrared photodetectors (QDIPs). A device model is developed and used to calculate the QDIP detectivity as a function of the structural parameters, temperature, and applied voltage, as well as to determine the conditions for the detectivity maximum. The QDIP detectivity is compared with that of quantum-well infrared photodetectors (QWIPs). This work clarifies why the existing QDIPs are still inferior to QWIPs and shows that a significant improvement in the QDIP performance can be accomplished by the utilization of dense QD arrays with small QDs. (C) 2001 American Institute of Physics.
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收藏
页码：3523 / 3525
页数：3
相关论文
共 26 条
  • [1] A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure
    Cho, T
    Kim, JW
    Oh, JE
    Choe, JW
    Hong, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2442 - 2444
  • [2] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
    Chu, L
    Zrenner, A
    Böhm, G
    Abstreiter, G
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3599 - 3601
  • [3] Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission
    Feldmann, J
    Cundiff, ST
    Arzberger, M
    Böhm, G
    Abstreiter, G
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1180 - 1183
  • [4] Phonon-assisted capture and intradot Auger relaxation in quantum dots
    Ferreira, R
    Bastard, G
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2818 - 2820
  • [5] Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K
    Finkman, E
    Maimon, S
    Immer, V
    Bahir, G
    Schacham, SE
    Fossard, F
    Julien, FH
    Brault, J
    Gendry, M
    [J]. PHYSICAL REVIEW B, 2001, 63 (04)
  • [6] GRAVE I, 1992, NATO ADV SCI I B-PHY, V288, P15
  • [7] Quantum dot infrared photodetector using modulation doped InAs self-assembled quantum dots
    Horiguchi, N
    Futatsugi, T
    Nakata, Y
    Yokoyama, N
    Mankad, T
    Petroff, PM
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2559 - 2561
  • [8] KANE MJ, 1992, NATO ADV SCI I B-PHY, V288, P31
  • [9] Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector
    Kim, S
    Mohseni, H
    Erdtmann, M
    Michel, E
    Jelen, C
    Razeghi, M
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 963 - 965
  • [10] Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
    Lee, SW
    Hirakawa, K
    Shimada, Y
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1428 - 1430
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