Monitoring of Si-solar cell degradation with electroluminescence

被引：8

作者：

Mchedlidze, Teimuraz ^{[1
]}

Herguth, Axel ^{[2
]}

Weber, Joerg ^{[1
]}

机构：

[1] Tech Univ Dresden, D-01062 Dresden, Germany

[2] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 155卷

关键词：

Degradation; Solar cell; Silicon; Monitoring; Electroluminescence; LIGHT-INDUCED DEGRADATION; DOPED CZOCHRALSKI SILICON; BORON-OXYGEN COMPLEX; CRYSTALLINE SILICON; RECOMBINATION CENTERS; ELECTRONIC-PROPERTIES; EFFICIENCY;

D O I：

10.1016/j.solmat.2016.05.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Monitoring of the intensity of band-to-band electroluminescence (EL) from B-doped Cz-Si solar cells allowed reliable detection of their degradation under forward bias. Degradation related changes in the open circuit voltage for a cell can be well estimated from the related changes in the EL-intensity value under fixed forward current flow. Kinetics of the degradation could be accessed from the time dependence of EL-intensity changes. The method of monitoring of the degradation process is fully applicable to the cells with complicated structure, e.g. cells with passivated emitter rear contact (PERC). Comparison of degradation process in standard and PERC solar cells indicated on faster and more severe degradation in PERC cells. (C) 2016 Elsevier B.V. All rights reserved.

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页码：38 / 42

页数：5

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