Strong enhancement and long-time stabilization of porous silicon photoluminescence by laser irradiation

被引：20

作者：

Fujiwara, M ^{[1
]}

Matsumoto, T ^{[1
]}

Kobayashi, H ^{[1
]}

Tanaka, K ^{[1
]}

Happo, N ^{[1
]}

Horii, K ^{[1
]}

机构：

[1] Hiroshima City Univ, Fac Informat Sci, Asaminami Ku, Hiroshima 7313194, Japan

来源：

JOURNAL OF LUMINESCENCE | 2005年 / 113卷 / 3-4期

关键词：

photoluminescence; FT-IR spectroscopy; laser irradiation; PL enhancement; PL stabilization;

D O I：

10.1016/j.jlumin.2004.10.020

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A remarkable enhancement in photoluminescence (PL) intensity of porous silicon (PS) by a factor of over 250 was observed by laser irradiation. The long-time stabilization of the PL was confirmed by PL measurements at intervals of 10 days in aging time (after 10, 20 and 30 days of aging). The composition of the PS surface was monitored by transmission FT-IR spectroscopy and it was found that the PS surface oxidation significantly progresses by the laser heating effect. The experimental results suggest a possibility that laser irradiation provides a relatively easy way to achieve the efficient and stable PS luminescence. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：243 / 248

页数：6

共 22 条

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