Hydrogenation studies in p-GaAs

被引：1

作者：

Singh, UP ^{[1
]}

Srivastava, PC ^{[1
]}

机构：

[1] Banaras Hindu Univ, Dept Phys, Varanasi 221005, Uttar Pradesh, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 10期

关键词：

D O I：

10.1088/0268-1242/13/10/027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenation studies in p-GaAs have been performed by fabricating Pd/p-GaAs devices. The devices have been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. The forward C-V characteristics have shown the presence of interfacial deep donors at E-c- 1.05 eV and E-c- 0.88 eV, the density of which decreased on hydrogenation. The content of hydrogen in Pd/p-GaAs has been measured both in the semiconducting substrates and the palladium thin film by ERDA using 55 MeV Si ions.

引用

页码：1219 / 1224

页数：6

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