Impact of strain on free-exciton resonance energies in wurtzite AlN

被引：46

作者：

Ikeda, Hirokatsu ^{[1
]}

Okamura, Takahiro ^{[1
]}

Matsukawa, Kodai ^{[1
]}

Sota, Takayuki ^{[1
]}

Sugawara, Mariko ^{[2
]}

Hoshi, Takuya ^{[2
]}

Cantu, Pablo ^{[3
,4
]}

Sharma, Rajat ^{[3
,4
]}

Kaeding, John F. ^{[3
,4
]}

Keller, Stacia ^{[3
,4
]}

Mishra, Umesh K. ^{[3
,4
]}

Kosaka, Kei ^{[5
]}

Asai, Keiichiro ^{[5
]}

Sumiya, Shigeaki ^{[5
]}

Shibata, Tomohiko ^{[5
]}

Tanaka, Mitsuhiro ^{[5
]}

Speck, James S. ^{[3
,4
,6
]}

DenBaars, Steven P. ^{[3
,4
,6
]}

Nakamura, Shuji ^{[3
,4
,6
]}

Koyama, Takahiro ^{[7
,8
]}

Onuma, Takeyoshi ^{[7
,8
]}

Chichibu, Shigefusa F. ^{[7
,8
]}

机构：

[1] Waseda Univ, Dept Elect Engn & Biosci, Shinjuku Ku, Tokyo 1698555, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] NGK Insulators Ltd, Aichi 4678507, Japan

[6] Japan Sci & Technol Agcy, NICP, ERATO, Kawaguchi, Saitama 3320012, Japan

[7] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[8] Japan Sci & Technol Agcy, ERATO, NICP, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 12期

关键词：

D O I：

10.1063/1.2825577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: E-g=6.095 eV at T=11 K, epsilon=7.87, epsilon(perpendicular to)=7.33, and epsilon(parallel to)=8.45, respectively. A brief discussion of the valence band ordering in bulk AlxGa1-xN is also presented. (c) 2007 American Institute of Physics.

引用

页数：5

共 32 条

[1] INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J].

AKASAKI, I ;

HASHIMOTO, M .

SOLID STATE COMMUNICATIONS, 1967, 5 (11) :851-+

[2]

Bir G. L., 1974, Symmetry and Strain-Induced Effects in Semiconductors

[3] Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers [J].

Chichibu, S ;

Shikanai, A ;

Azuhata, T ;

Sota, T ;

Kuramata, A ;

Horino, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3766-3768

[4] LATTICE VIBRATION SPECTRA OF ALUMINUM NITRIDE [J].

COLLINS, AT ;

LIGHTOWLERS, EC ;

DEAN, PJ .

PHYSICAL REVIEW, 1967, 158 (03) :833-+

[5]

Edgar J.H., 1994, PROPERTIES GROUP 3 N

[6] Oscillator strengths for optical band-to-band processes in GaN epilayers [J].

Gil, B ;

Hamdani, F ;

Morkoc, H .

PHYSICAL REVIEW B, 1996, 54 (11) :7678-7681

[7] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[8] Effective masses and valence-band splittings in GaN and AlN [J].

Kim, K ;

Lambrecht, WRL ;

Segall, B ;

vanSchilfgaarde, M .

PHYSICAL REVIEW B, 1997, 56 (12) :7363-7375

[9] Relation between AI vacancies and deep emission bands in AIN epitaxial films grown by NH3-source molecular beam epitaxy [J].

Koyama, T. ;

Sugawara, M. ;

Hoshi, T. ;

Uedono, A. ;

Kaeding, J. F. ;

Sharma, R. ;

Nakamura, S. ;

Chichibua, S. F. .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[10] About some optical properties of AlxGa1-xN/GaN quantum wells grown by molecular beam epitaxy [J].

Leroux, M ;

Semond, F ;

Natali, F ;

Byrne, D ;

Cadoret, F ;

Damilano, B ;

Dussaigne, A ;

Grandjean, N ;

Le Louarn, A ;

Vézian, S ;

Massies, J .

SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (4-6) :659-674

← 1 2 3 4 →