InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching

In this work, we report on a 3D device fabrication technology achieved by applying a novel anisotropic wet etching method. By aligning channel structures along different crystal orientations, high performance 3D InGaAs devices with different channel shapes such as fins, nanowires and waves have been demonstrated. With further optimizing off-state leakage path by barrier engineering, a record high I-ON/I-OFF over 108 and minimum I-OFF similar to 3pA/mu m have been obtained from InGaAs FinFET device. Scaling metrics for InGaAs GAA MOSFETs and FinFETs are systematically studied with L-ch from 800 nm down to 50 nm and W-Fin/W-NW from 100 nm down to 20 nm which shows an excellent immunity to short channel effects.