Highly enhanced performance for sensing by monolayer 1T' WS2 with atomic vacancy

被引:14
作者
Wang, Weiqi [1 ]
Cao, Jiamu [1 ,2 ]
Zhou, Jing [1 ,2 ]
Chen, Junyu [1 ]
Liu, Junfeng [1 ]
Deng, Huichao [3 ]
Zhang, Yufeng [1 ,2 ]
Liu, Xiaowei [1 ,2 ]
机构
[1] Harbin Inst Technol, MEMS Ctr, Harbin 150001, Heilongjiang, Peoples R China
[2] Minist Educ, Key Lab Microsyst & Microstruct Mfg, Harbin 150001, Peoples R China
[3] Beihang Univ, Beijing 100191, Peoples R China
关键词
First principle; Atomic vacancy defect; Monolayer 1T' phase WS2; Gas sensing; MOS2; MONOLAYER; GAS-ADSORPTION; 1ST-PRINCIPLES; NH3; NANOMATERIALS; BEHAVIOR; SENSORS; MONO; H-2; NI;
D O I
10.1016/j.mee.2020.111215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Superior gas capture and detection performance play an important role in gas sensing materials. Effects of atomic vacancy defects on intrinsic properties of material are also not negligible. Here we firstly discuss gas adsorption behavior of defective 1T' WS2 monolayer. We take toxic NO2 gas as an example to compare adsorption effects between defective and perfect 1T' WS2 monolayer. First-principles study based on density functional theory(DFT) is carried out to act as the theoretical basis. These results demonstrate vacancy defects could enhance adsorption stability of 1T' WS2 monolayer, which provide lower adsorption energy, more charge transfer and more overlaps of density of states. Therefore, vacancy defects make 1T' WS2 monolayer possess more outstanding surface activity and adsorption performance. This can also offer theoretical support for the improvement of nanomaterials applied in those high performance gas sensing devices.
引用
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页数:5
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