Structural Stability of Bilayer MoS2 in Ambient Air

被引:8
作者
Femi-Oyetoro, John [1 ]
Yao, Kevin [1 ]
Hathaway, Evan [1 ]
Jiang, Yan [1 ]
Ojo, Ibikunle [1 ]
Squires, Brian [1 ]
Neogi, Arup [1 ]
Cui, Jingbiao [1 ]
Philipose, Usha [1 ]
Gadiyaram, Nithish Kumar [2 ]
Zhou, Weidong [2 ]
Perez, Jose [1 ]
机构
[1] Univ North Texas, Dept Phys, Denton, TX 76203 USA
[2] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
基金
美国国家科学基金会;
关键词
2D transition metal dichalcogenides; ambient degradation; chemical vapor deposition; Forster resonance energy transfer; MoS; (2) bilayers; oxidation; TRANSITION-METAL DICHALCOGENIDES; OXIDATION;
D O I
10.1002/admi.202101188
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
It is reported that chemical vapor deposition (CVD) grown bilayer (BL) MoS2 films are significantly more structurally stable in ambient air than CVD-grown monolayer (ML) MoS2 films that have been reported to structurally degrade in ambient air. The authors present atomic force microscopy (AFM) images of preheated and as-grown ML and multilayer MoS2 films after exposure to ambient air for periods of up to 2 years. The AFM images show that, in ambient air, preheated and as-grown BL and thicker-layer MoS2 films do not exhibit the growth of dendrites that is characteristic of ML degradation. Dendrites are observed to stop at the ML-BL boundary. Raman spectra of BLs exposed for up to 2 years are similar to those reported for as-grown BLs. The greater stability of BLs and thicker layers are attributed to their indirect band gaps that suppress Forster resonance energy transfer processes that have been proposed to be responsible for ML degradation. The results show that BL and thicker-layer transition metal dichalcogenides with indirect band gaps may be structurally stable in air and useful for ambient-air applications.
引用
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页数:8
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