Electron-hole excitations in semiconductors and insulators

被引：787

作者：

Rohlfing, M ^{[1
]}

Louie, SG

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.81.2312

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a new ab initio approach to calculate the interaction between electrons and holes in periodic crystals and to evaluate the resulting coupled electron-hole excitations. This involves a novel interpolation scheme in reciprocal space in solving the Bethe-Salpeter equation for the two-particle Green's function. We apply this approach to the calculation of the entire optical absorption spectrum, as well as of the energies and wave functions of bound exciton states in GaAs and LiF. Very good agreement with experiment is observed.

引用

页码：2312 / 2315

页数：4

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