Gallium nitride nanotubes by the conversion of gallium oxide nanotubes

被引：95
作者：
Hu, JQ
Bando, Y
Golberg, D
Liu, QL
机构：
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2003年 / 42卷 / 30期
关键词：
gallium; nanotechnology; nanotubes; nitrides;
D O I：
10.1002/anie.200351001
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The future technology of blue lasers and optical communication, and is likely to be based on GaN. The creation of crystalline GaN nanotubes in bulk has been achieved by a two-stage process based on the well-controllable amorphous gallium oxide (Ga2O) nanotube conversion. The assynthesized GaN nanotubes have fairly uniform diameters of ≈80 nm, wall thicknesses of ≈20 nm, and lengths of up to several tens of micrometers.
引用
收藏
页码：3493 / 3497
页数：5
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