Magneto-photoluminescence in high magnetic fields from InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

被引：3
|
作者：
Uchida, K
Miura, N
Sakuma, Y
Awano, Y
Futatsugi, T
Yokoyama, N
机构：
[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan
[2] Fujitsu Ltd, Atsugi, Kanagawa 24301, Japan
来源：
PHYSICA B-CONDENSED MATTER | 1998年 / 249卷
关键词：
InGaAs/GaAs; quantum dots; tetrahedral-shaped recess; magneto-photoluminescence;
D O I：
10.1016/S0921-4526(98)00108-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Novel GaAs/InGaAs/GaAs quantum dot (QD) structures in tetrahedral-shaped recesses formed on a (1 1 1)B GaAs substrate are fabricated using metalorganic vapor-phase epitaxy. Magneto-photoluminescence (PL) measurement are performed under pulsed high magnetic fields up to 40 T applied parallel and perpendicular to the growth direction of the QD. The diamagnetic shift of the PL originating from QD are observed. The amount of the shift is less than that of the PL from quantum wells for both configurations, indicating strong zero-dimensional quantum confinement. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：247 / 251
页数：5
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