Deep energy levels in CdTe and CdZnTe

被引：272
作者：
Castaldini, A
Cavallini, A
Fraboni, B
Fernandez, P
Piqueras, J
机构：
[1] Univ Bologna, Dipartmento Fis, INFM, I-40127 Bologna, Italy
[2] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-38040 Madrid, Spain
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 04期
关键词：
D O I：
10.1063/1.366946
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed. (C) 1998 American Institute of Physics.
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页码：2121 / 2126
页数：6
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