Lattice dynamics of layered ferroelectric semiconductor compound TlGaSe2

被引:5
作者
Hashimzade, F. M. [2 ]
Huseinova, D. A. [2 ]
Orudzhev, G. S. [2 ]
Nizametdinova, M. A. [3 ]
Ulubey, A. M. [1 ]
Allakhverdiev, K. R. [2 ,4 ]
机构
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
[2] Azerbaijan Natl Acad Sci, Inst Phys, Baku, Azerbaijan
[3] Azerbaijan Univ Architecture & Construct, Baku, Azerbaijan
[4] Marmara Res Ctr, Mat Inst, TUBITAK, Gebze, Turkey
关键词
Semiconductors; Infrared spectroscopy; Lattice dynamics; PHASE-TRANSITIONS; TLINS2; RAMAN;
D O I
10.1016/j.materresbull.2010.06.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the first-principles calculation of the lattice dynamics of the TlGaSe2 ternary semiconductor having highly anisotropic crystal structure. Calculations have been performed using open-source code ABINIT on the basis of the density functional perturbation theory within the plane-wave pseudopotential approach. Results on the frequencies of phonon modes in the centre of Brilloin zone and the dispersion of transverse shear acoustic branch of the phonon spectra agree well with the experimental data on Raman scattering, infrared reflectivity and ultrasound wave propagation in TlGaSe2. The calculated and experimental temperature dependencies of heat capacity are in a good agreement up to the room temperature. Along the layer, the low-frequency acoustic branch displays the bending wave behavior which is characteristic of the layer crystal structures. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1438 / 1442
页数:5
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