The performance of several Doherty power amplifiers (DPA) is presented. The power amplifiers make use of new input-prematched transistors based on GaN HFETs fabricated with RFMD's GaN1C process technology. The DPAs operate in several frequency bands including 860-900 MHz, 2.1-2.17 GHz, and 2.5-2.7 GHz. The DPAs were characterized with a 3GPP WCDMA signal with 7.5 dB PAR. At 875-890 MHz, a DPA achieves 58.0 dBm peak saturated power, while showing 50.4% drain efficiency and -50 dBc ACPR at 50.3 dBm average power. At 2.14 GHz, a DPA achieves greater than 56.7 dBm peak saturated power, while showing 48% drain efficiency and -55 dBc ACPR at 49.1 dBm average power. At 2.6 GHz, a DPA achieves greater than 52.8 dBm peak saturated power, while showing 47.5% drain efficiency and -50 dBc ACPR at 45 dBm average power.
