Polarization independent bulk active region semiconductor optical amplifiers for 1.3 mu m wavelengths

被引：29

作者：

Holtmann, C

Besse, PA

Brenner, T

Melchior, H

机构：

[1] SWISS FED INST TECHNOL,INST MICROENGN,CH-1015 LAUSANNE,SWITZERLAND

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期

关键词：

D O I：

10.1109/68.481111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor optical amplifiers for 1.3 mu m are realized combining single-step grown bulk active region with ridge-waveguides. Achieved fiber-to-fiber gains are in excess of 27 dB with spectral ripples below 0.2 dB, Gain is polarization insensitive to within 1 dB over the entire range of driving current, 1.28 mu m to 1.34 mu m wavelength and 10 degrees C to 50 degrees C heat sink temperature. Intrinsic noise figure is 6.3 dB, Gain saturates at +10 dBm.

引用

收藏

页码：343 / 345

页数：3

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