Study and Simulation of the Heterojunction Thin Film Solar Cell a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)

被引:2
作者
Toufik, Zarede [1 ,2 ]
Hamza, Lidjici [2 ]
Mohamed, Fathi [1 ]
Achour, Mahrane [1 ]
机构
[1] CDER, UDES, Bou Ismail 42415, W Tipaza, Algeria
[2] Lab Etud & Dev Mat Semicond & Dielect Ghardaia, Laghouat, Algeria
关键词
Heterojunction; thin film; silicon; AFORS-het; conversion efficiency; EFFICIENCY; OPTIMIZATION;
D O I
10.1007/s11664-016-4542-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)), using the automat for simulation of hetero-structures (AFORS-Het) software. This cell is composed of four main layers of silicon (Si): (i) 5 nm amorphous silicon doped n, (ii) 100 mu m crystalline silicon (substrate) doped p, (iii) 5 nm amorphous silicon doped p, and (iv) 3 nm amorphous silicon intrinsic. This cell has a front and rear metal contact of aluminum and zinc oxide (ZnO) front layer transparent conductive oxide of 80 nm thickness. The simulations were performed at conditions of "One Sun'' irradiation with air mass 1.5 (AM1.5), and under absolute temperature T = 300 K. The simulation results have shown a high electrical conversion efficiency of about 30.29% and high values of open circuit voltage V-oc = 779 mV. This study has also shown that the studied cell has good quality light absorption on a very broad spectrum.
引用
收藏
页码:3943 / 3948
页数:6
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