Effect of Zn/Si ratio on the microstructural and microwave dielectric properties of Zn2SiO4 ceramics

被引:110
|
作者
Nguyen, Ngoc-Huan
Lim, Jong-Bong
Nahm, Sahn [1 ]
Paik, Jong-Hoo
Kim, Jong-Hee
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea
关键词
D O I
10.1111/j.1551-2916.2007.01891.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Zn2SiO4 ceramics synthesized by the conventional solid-state method exhibited a low Q x f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn2SiO4 ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q x f value. In particular, the ceramics with nominal composition Zn1.8SiO3.8 sintered at 1300 degrees C exhibited improved microwave dielectric properties of epsilon(r)=6.6, Q x f=147 000 GHz, and tau(f)=-22 ppm/degrees C.
引用
收藏
页码:3127 / 3130
页数:4
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