Specific features of XGM in QD-SOA

被引：35

作者：

Ben Ezra, Y. ^{[1
]}

Lembrikov, B. I. ^{[1
]}

Haridim, M. ^{[1
]}

机构：

[1] Holon Inst Technol, Dept Commun Engn, Fac Engn, IL-58102 Holon, Israel

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 7-8期

关键词：

cross-gain modulation (XGM); optical networks; quantum dot (01)); semiconductor optical amplifier (SOA); wavelength conversion (WC);

D O I：

10.1109/JQE.2007.901587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The peculiarities of a cross-g in modulation (XGM) in quantum-dot semiconductor optical amplifiers (QD SOAs) related to the inhomogeneous broadening are theoretically studied. We have solved numerically the electron rate equations for the QD SOA model including an excited state, a ground state and a. continuum wetting layer (WL), and the propagation equations for the pump and the signal lightwaves. It is shown that XGM in QD SOA is possible for a comparatively large detuning close to the inhomogeneous broadening because in such a case QDs with substantially different resonant frequencies interact directly through WL.

引用

页码：730 / 737

页数：8

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