Quantification of trap densities at dielectric/III-V semiconductor interfaces

被引：42

作者：

Engel-Herbert, Roman ^{[1
]}

Hwang, Yoontae ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

关键词：

conduction bands; dielectric materials; electronic density of states; Fermi level; gallium arsenide; hafnium compounds; high-k dielectric thin films; III-V semiconductors; indium compounds; interface states; semiconductor-insulator boundaries;

D O I：

10.1063/1.3479047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and III-V semiconductor channels are modeled. The model takes into account the low conduction band density of states, the nonparabolicity of the Gamma valley, and the population of higher lying conduction band valleys. The model is used to determine interface trap densities (D(it)) and band bending of HfO(2)/In(0.53)Ga(0.47)As interfaces with different D(it) and with pinned and unpinned Fermi levels, respectively. Potential sources of errors in extracting D(it) are discussed and criteria that establish unpinned interfaces are developed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479047]

引用

页数：3

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