Pseudodonor nature of the DI defect in 4H-SiC

被引：86

作者：

Storasta, L ^{[1
]}

Carlsson, FHC ^{[1
]}

Sridhara, SG ^{[1
]}

Bergman, JP ^{[1
]}

Henry, A ^{[1
]}

Egilsson, T ^{[1
]}

Hallén, A ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1334907

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use the recent findings about the pseudodonor character of the D-I defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D-I defect indeed is correlated to such a hole trap. In addition, we show that the D-I defect is not correlated to the Z(1/2) electron trap, in contrast to what was previously reported. (C) 2001 American Institute of Physics.

引用

页码：46 / 48

页数：3

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