Optical characterization of Si1-xCx/Si (0<=x<=0.014) semiconductor alloys - Comment

被引：3
作者：
Zollner, S
Junge, KE
Lange, R
Affolder, AA
机构：
[1] IOWA STATE UNIV,DEPT PHYS & ASTRON,AMES,IA 50011
[2] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 11期
关键词：
silicon; SiC alloys; ellipsometry; strained layer;
D O I：
10.1143/JJAP.35.5684
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5684 / 5685
页数：2
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