Self-Assembled NiO Nanocrystal Arrays as Memristive Elements

被引:6
作者
Kurnia, Fran [1 ,2 ]
Liu, Chunli [3 ,4 ]
Raveendra, Nallagatla [3 ,4 ]
Jung, Chang Uk [3 ,4 ]
Vasudevan, Rama K. [5 ]
Valanoor, Nagarajan [1 ]
机构
[1] Univ New South Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Queens Univ Belfast, Sch Math & Phys, Ctr Nanostruct Media, Univ Rd, Belfast BT7 1NN, Antrim, North Ireland
[3] Hankuk Univ Foreign Studies, Dept Phys, Yongin 17035, South Korea
[4] Hankuk Univ Foreign Studies, Oxide Res Ctr, Yongin 17035, South Korea
[5] Oak Ridge Natl Lab, Ctr Nanophase & Mat Sci, Oak Ridge, TN 37831 USA
基金
新加坡国家研究基金会;
关键词
electrical dissipation; I-V switching; memristors; nanocrystals; nickel oxide; SWITCHING MECHANISMS; MEMORIES; TAOX;
D O I
10.1002/aelm.201901153
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Memristive switching, a nonlinear current-voltage (I-V) characteristic, has seen a tremendous surge in interest as an approach to achieve implementation of synaptic functions. The memristive switching behavior of self-assembled NiO nanocrystals is investigated via scanning probe microscopy, based on first-order reversal curve current-voltage spectroscopy. Synaptic switching is clearly observed as a direct consequence of filament growth (i.e., gradually increased conductance) in the nanocrystals. A spatial dependency of the conduction in the nanocrystals suggests that there is a localization of the switching filament. The current understanding of this localization ignores features related to local lateral variation current, which can generate an excessive local heat and temperature such as electrical dissipation. The observation of low electrical dissipation at the edge of the nanocrystals shows that less energy is wasted as heat such that the bias applied can be utilized more efficiently to assist the nucleation of the filament and thus reduces the power consumption. Electrical power dissipation is also found to scale with nanocrystal height and has spatial dependence within the nanocrystals. The combination of synaptic switching and high density of the nanocrystals demonstrate that it is feasible to exploit them to create a basic architecture for neuromorphic memory devices.
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页数:8
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