In-Plane Self-Turning and Twin Dynamics Renders Large Stretchability to Mono-Like Zigzag Silicon Nanowire Springs

被引：38

作者：

Xue, Zhaoguo ^{[1
]}

Xu, Mingkun ^{[1
]}

Li, Xing ^{[2
]}

Wang, Jimmy ^{[1
]}

Jiang, Xiaofan ^{[1
]}

Wei, Xianlong ^{[2
]}

Yu, Linwei ^{[1
,3
]}

Chen, Qing ^{[2
]}

Wang, Junzhuan ^{[1
]}

Xu, Jun ^{[1
]}

Shi, Yi ^{[1
]}

Chen, Kunji ^{[1
]}

Roca i Cabarrocas, Pere ^{[3
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Sch Elect Sci & Engn, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[3] Univ Paris Saclay, Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

来源：

ADVANCED FUNCTIONAL MATERIALS | 2016年 / 26卷 / 29期

关键词：

GROWTH; ELECTRONICS; MECHANISMS;

D O I：

10.1002/adfm.201600780

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 degrees C) thin film technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic-index-lowering self-turning and twin dynamics is reported, during a tin-catalyzed in-plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin-reflected interlaced crystal-domain structure has been identified for the first time, while in situ and real-time scanning electron microscopy observations reveal a new twin-triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct "stress-strain" testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono-like SiNW channels for high performance stretchable electronics.

引用

页码：5352 / 5359

页数：8

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