Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells

被引：88

作者：

Funato, M. ^{[1
]}

Hayashi, K. ^{[1
]}

Ueda, M. ^{[1
]}

Kawakami, Y. ^{[1
]}

Narukawa, Y. ^{[2
]}

Mukai, T. ^{[2
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2956404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the apparent emission colors of InGaN-based light-emitting diodes using microstructured multifacet quantum wells as active layers can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on facet-dependent polychromatic emissions. The pulsed current operation with the appropriate duties varied their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. (C) 2008 American Institute of Physics.

引用

页数：3

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